| PART |
Description |
Maker |
| HL9-100KWTQ HL9-101KWTQ HL9-102KWTQ HL9-1R0KWTQ HL |
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
HIGH CURRENT POWER CHOKES
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC.
|
| BCX69 BCX69-25 BCX69-16 BCX69-10 |
PNP Silicon AF Transistors 自动对焦进步党硅晶体
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
General Purpose Transistors - SOT89; VCEO=20V; hFE=85..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250
|
INFINEON[Infineon Technologies AG]
|
| 2N4402 2N4403 ON0046 2N4403RLRE |
General Purpose Transistors PNP
General Purpose Transistors(PNP Silicon)
Motorola Preferred Device
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| BC817-16L SBC817-16LT3 BC817-16LT3G BC849CLT1G BC8 |
General Purpose Transistors NPN Silicon Collector ?Emitter Voltage VCEO 45
General Purpose Transistors
|
ON Semiconductor
|
| 2N3906 2N3905 ON0043 2N3905-D |
General Purpose Transistors PNP Silicon
Motorola Preferred Device
From old datasheet system
General Purpose Transistors(PNP Silicon)
|
ONSEMI[ON Semiconductor]
|
| R7S00208 R7S00408 R7S00608 R7S00808 R7S01008 R7S01 |
200V, 800A general purpose single diode
400V, 800A general purpose single diode
600V, 800A general purpose single diode
800V, 800A general purpose single diode
1000V, 800A general purpose single diode
1200V, 800A general purpose single diode
1400V, 800A general purpose single diode
1600V, 800A general purpose single diode
1800V, 800A general purpose single diode
2000V, 800A general purpose single diode
2200V, 800A general purpose single diode
|
Powerex Power Semiconductors
|
| BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor
General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160
General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| IMZ4 A5800398 |
Transistors > Complex Bipolar Transistors
General purpose transistor (dual transistors)
From old datasheet system
|
Rohm CO.,LTD.
|
| NTE2404N NTE2404NPN NTE2404 NTE2405 |
300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Silicon Complementary Transistors Darlington / General Purpose
Silicon Complementary Transistors Darlington, General Purpose
|
NTE[NTE Electronics]
|
| JC557 JC556_557_558_3 JC556 JC556B JC557B JC558 JC |
PNP general purpose transistors
From old datasheet system
PNP general purpose transistor(PNP通用型晶体管)
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2SB1694 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
General purpose amplification (-30V, -1A)
General purpose amplification (−30V −1A)
|
ROHM[Rohm]
|
